Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process.
In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. The Simulation study presented in this article allows faster, simpler, and easier impact analysis of the design considerations on the Si solar cell wafer fabrications with increased performance.
- cm bulk lifetime of 2 ms emitter (n+) doping concentration of 1×1020 cm−3 and shallow back surface field doping concentration of 1×1018 cm−3 surface recombination velocity maintained in the range of 102 and 103 cm/s obtained a solar cell efficiency of 19%.
- Inferences from the results indicated that the bulk resistivity of 1 Ω In this study, the influence of various parameters like the thickness of the absorber or wafer, doping concentration, bulk resistivity, lifetime, and doping levels of the emitter and back surface field, along with the surface recombination velocity (front and back) on solar cell efficiency was investigated using PC1D simulation software.
Improving solar cell efficiency is considered a prerequisite to reinforcing silicon solar cells’ growth in the energy market. Solar energy is considered a vital energy source that addresses this demand in a cost-effective and environmentally friendly manner. Expeditious urbanization and rapid industrialization have significantly influenced the rise of energy demand globally in the past two decades.